Organic blend thin films consisting of semiconducting poly(3- hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT toward the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) columnar structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 10-2 cm2/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm by few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices.