Wire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors

Craig E. Murphy; Li Yang; Santanu Ray; Liyang Yu; Steven Knox; Natalie Stingelin

doi:10.1063/1.3660779

Wire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors

Craig E. Murphy, Li Yang, Santanu Ray, Liyang Yu, Steven Knox, Natalie Stingelin

Research output: Contribution to journal › Article › peer-review

Abstract

Organic blend thin films consisting of semiconducting poly(3- hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT toward the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) columnar structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 10^-2 cm²/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm by few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices.

Original language	English
Article number	093523
Journal	Journal of Applied Physics
Volume	110
Issue number	9
DOIs	https://doi.org/10.1063/1.3660779
Publication status	Published - 1 Nov 2011

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title = "Wire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors",

abstract = "Organic blend thin films consisting of semiconducting poly(3- hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT toward the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) columnar structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 10-2 cm2/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm by few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices.",

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T1 - Wire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors

AU - Murphy, Craig E.

AU - Yang, Li

AU - Ray, Santanu

AU - Yu, Liyang

AU - Knox, Steven

AU - Stingelin, Natalie

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Organic blend thin films consisting of semiconducting poly(3- hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT toward the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) columnar structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 10-2 cm2/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm by few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices.

AB - Organic blend thin films consisting of semiconducting poly(3- hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT toward the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) columnar structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 10-2 cm2/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm by few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices.

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Wire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors

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