N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique

N. Chauhan; V. Palaninathan; S. Raveendran; A.C. Poulose; Y. Nakajima; T. Hasumura; T. Uchida; T. Hanajiri; T. Maekawa; D.S. Kumar

doi:10.1002/admi.201400515

N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

N. Chauhan
, V. Palaninathan
, S. Raveendran
, A.C. Poulose
, Y. Nakajima
, T. Hasumura
, T. Uchida
, T. Hanajiri
, T. Maekawa
, D.S. Kumar

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	1400515
Journal	Advanced Materials Interfaces
Volume	2
Issue number	5
DOIs	https://doi.org/10.1002/admi.201400515
Publication status	Published - 18 Feb 2015

Access to Document

10.1002/admi.201400515

Cite this

Chauhan, N., Palaninathan, V., Raveendran, S., Poulose, A. C., Nakajima, Y., Hasumura, T., Uchida, T., Hanajiri, T., Maekawa, T., & Kumar, D. S. (2015). N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique. Advanced Materials Interfaces, 2(5), Article 1400515. https://doi.org/10.1002/admi.201400515

@article{b97ed7f4af804acdbfcc77dd7c4e6d13,

title = "N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique",

author = "N. Chauhan and V. Palaninathan and S. Raveendran and A.C. Poulose and Y. Nakajima and T. Hasumura and T. Uchida and T. Hanajiri and T. Maekawa and D.S. Kumar",

year = "2015",

month = feb,

day = "18",

doi = "10.1002/admi.201400515",

language = "English",

volume = "2",

journal = "Advanced Materials Interfaces",

number = "5",

}

Chauhan, N, Palaninathan, V, Raveendran, S, Poulose, AC, Nakajima, Y, Hasumura, T, Uchida, T, Hanajiri, T, Maekawa, T & Kumar, DS 2015, 'N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique', Advanced Materials Interfaces, vol. 2, no. 5, 1400515. https://doi.org/10.1002/admi.201400515

TY - JOUR

T1 - N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique

AU - Chauhan, N.

AU - Palaninathan, V.

AU - Raveendran, S.

AU - Poulose, A.C.

AU - Nakajima, Y.

AU - Hasumura, T.

AU - Uchida, T.

AU - Hanajiri, T.

AU - Maekawa, T.

AU - Kumar, D.S.

PY - 2015/2/18

Y1 - 2015/2/18

U2 - 10.1002/admi.201400515

DO - 10.1002/admi.201400515

M3 - Article

VL - 2

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 5

M1 - 1400515

ER -