N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique

N. Chauhan, V. Palaninathan, S. Raveendran, A.C. Poulose, Y. Nakajima, T. Hasumura, T. Uchida, T. Hanajiri, T. Maekawa, D.S. Kumar

Research output: Contribution to journalArticle

Original languageEnglish
Article number1400515
JournalAdvanced Materials Interfaces
Volume2
Issue number5
DOIs
Publication statusPublished - 18 Feb 2015

Cite this

Chauhan, N., Palaninathan, V., Raveendran, S., Poulose, A. C., Nakajima, Y., Hasumura, T., ... Kumar, D. S. (2015). N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique. Advanced Materials Interfaces, 2(5), [1400515]. https://doi.org/10.1002/admi.201400515
Chauhan, N. ; Palaninathan, V. ; Raveendran, S. ; Poulose, A.C. ; Nakajima, Y. ; Hasumura, T. ; Uchida, T. ; Hanajiri, T. ; Maekawa, T. ; Kumar, D.S. / N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique. In: Advanced Materials Interfaces. 2015 ; Vol. 2, No. 5.
@article{b97ed7f4af804acdbfcc77dd7c4e6d13,
title = "N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique",
author = "N. Chauhan and V. Palaninathan and S. Raveendran and A.C. Poulose and Y. Nakajima and T. Hasumura and T. Uchida and T. Hanajiri and T. Maekawa and D.S. Kumar",
year = "2015",
month = "2",
day = "18",
doi = "10.1002/admi.201400515",
language = "English",
volume = "2",
journal = "Advanced Materials Interfaces",
number = "5",

}

Chauhan, N, Palaninathan, V, Raveendran, S, Poulose, AC, Nakajima, Y, Hasumura, T, Uchida, T, Hanajiri, T, Maekawa, T & Kumar, DS 2015, 'N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique', Advanced Materials Interfaces, vol. 2, no. 5, 1400515. https://doi.org/10.1002/admi.201400515

N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique. / Chauhan, N.; Palaninathan, V.; Raveendran, S.; Poulose, A.C.; Nakajima, Y.; Hasumura, T.; Uchida, T.; Hanajiri, T.; Maekawa, T.; Kumar, D.S.

In: Advanced Materials Interfaces, Vol. 2, No. 5, 1400515, 18.02.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique

AU - Chauhan, N.

AU - Palaninathan, V.

AU - Raveendran, S.

AU - Poulose, A.C.

AU - Nakajima, Y.

AU - Hasumura, T.

AU - Uchida, T.

AU - Hanajiri, T.

AU - Maekawa, T.

AU - Kumar, D.S.

PY - 2015/2/18

Y1 - 2015/2/18

U2 - 10.1002/admi.201400515

DO - 10.1002/admi.201400515

M3 - Article

VL - 2

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 5

M1 - 1400515

ER -