N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique

N. Chauhan; V. Palaninathan; S. Raveendran; A.C. Poulose; Y. Nakajima; T. Hasumura; T. Uchida; T. Hanajiri; T. Maekawa; D.S. Kumar

doi:10.1002/admi.201400515

N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

N. Chauhan, V. Palaninathan, S. Raveendran, A.C. Poulose, Y. Nakajima, T. Hasumura, T. Uchida, T. Hanajiri, T. Maekawa, D.S. Kumar

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	1400515
Journal	Advanced Materials Interfaces
Volume	2
Issue number	5
DOIs	https://doi.org/10.1002/admi.201400515
Publication status	Published - 18 Feb 2015

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10.1002/admi.201400515

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Chauhan, N., Palaninathan, V., Raveendran, S., Poulose, A. C., Nakajima, Y., Hasumura, T., Uchida, T., Hanajiri, T., Maekawa, T., & Kumar, D. S. (2015). N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique. Advanced Materials Interfaces, 2(5), Article 1400515. https://doi.org/10.1002/admi.201400515

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Chauhan, N, Palaninathan, V, Raveendran, S, Poulose, AC, Nakajima, Y, Hasumura, T, Uchida, T, Hanajiri, T, Maekawa, T & Kumar, DS 2015, 'N₂‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique', Advanced Materials Interfaces, vol. 2, no. 5, 1400515. https://doi.org/10.1002/admi.201400515

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AU - Chauhan, N.

AU - Palaninathan, V.

AU - Raveendran, S.

AU - Poulose, A.C.

AU - Nakajima, Y.

AU - Hasumura, T.

AU - Uchida, T.

AU - Hanajiri, T.

AU - Maekawa, T.

AU - Kumar, D.S.

PY - 2015/2/18

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